DG1S6

DG1S6


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    • Certifications title
    Certificazione RoHs
    Certificazione AEC-Q

    Power Module Schottky Barrier Diode
    SCHOTTKY B. DIODE 60V 1A@128°C SC-109 AEC-Q101

    Documentation

    • Type
      Power Module Schottky Barrier Diode
    • Brand name
      Shindengen Electric Manufacturing Co., Ltd.
    • Alternatives
      • PMEG6010CEGWX
      • PMEG6010CEGWJ
    • Vrrm [V]
      60V
    • Ifa[A]
      1A
    • Tc [°C]
      25°C
    • I2t
      -
    • Ifsm
      30A
    • Vfm
      0.58V
    • Data sheet
      download DG1S6.pdf

    Shindengen Electric Manufacturing Co., Ltd.

    Power Module -> Schottky Barrier Diode

    Schottky diode is a metal-semiconductor junction diode with low threshold voltage and high switching speed. A metal-semiconductor junction is made in the Schottky diode to create a Schottky barrier instead of a p-n junction as in conventional diodes. The most important difference between normal diodes and Schottky diodes is the reverse recovery time. In Schottky diodes it is null since there is nothing to reset.

    Image Code Vrrm [V] Ifa[A] Tc [°C] I2t Ifsm Vfm
    nsUHHD3r-G-5e D3CE6S

    60V
    |
    3A
    |
    112°C
    |
    -
    |
    100A
    |
    0.58V

    		 60V 3A 112°C - 100A 0.58V SCHOTTKY DIODE 60V 3A@112°C SC-110B (CE) AEC-Q101
    DG1S4

    40V
    |
    1A
    |
    25°C
    |
    -
    |
    30A
    |
    0.55V

    		 40V 1A 25°C - 30A 0.55V SCHOTTKY B. DIODE 40V 1A@36°C SC-109 AEC-Q101
    DG1S6

    60V
    |
    1A
    |
    25°C
    |
    -
    |
    30A
    |
    0.58V

    		 60V 1A 25°C - 30A 0.58V SCHOTTKY B. DIODE 60V 1A@128°C SC-109 AEC-Q101